Indentation-induced deformations of GaAs(011) at a high temperature

Indentation tests were performed at a high temperature on GaAs(011). This orientation allowed the activation of normal and inclined slip systems. Samples with two different thicknesses were prepared and a large range of loads was used. Observations on decreasing scales were carried out using different microscopies and more particularly transmission electron microscopy on thin foils prepared by the focused-ion-beam technique. The back side of the thinnest samples could be deformed using the highest loads. The deformation was observed to be anisotropic on the back side as well as at the indented surface. On one side of the indentation, an anisotropic climb of matter was revealed and associated with microtwinning development. Convergent-beam electron diffraction as well as chemical etching allowed us to determine rigorously the polarity of the samples and the character of dislocations (alpha or beta) generated by the indenter. The dislocations extending deeper into the samples were determined to be alpha dislocations. This result was discussed in view of the difference between the core reconstructions and mobilities of alpha and beta dislocations.