Prediction of electronic structures and transport properties of SnS2/BN heterostructures by the density functional theory

被引:0
|
作者
Wu, Y. N. [1 ]
Liu, W. Q. [1 ]
Zhao, S. T. [1 ]
Huang, Y. S. [1 ]
Ni, J. [2 ,3 ]
机构
[1] Fuyang Normal Univ, Key Lab Funct Mat & Devices Informat Anhui Educ I, Fuyang 236037, Peoples R China
[2] Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China
[3] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
来源
AIP ADVANCES | 2019年 / 9卷 / 08期
基金
中国国家自然科学基金;
关键词
Structural properties - Van der Waals forces - Electric fields - Transport properties - Semiconducting tin compounds - Electronic structure - IV-VI semiconductors - Sulfur compounds;
D O I
10.1063/1.5115241
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Based on the density functional theory and nonequilibrium Green's function, we have calculated the electronic structures and transport properties of two dimensional (2D) SnS2/BN van der Waals (vdW) heterostructures. The electron-hole pairs are spatially separated in SnS2/BN heterostructure, and located at BN and SnS2 layers, respectively. The electronic structure of SnS2/BN heterostructure are adjusted effectively by the external electric field. Compared with the SnS2/BN heterostructure, the SnS2/C-x(BN)(1-x) system has good properties of electronic transport. Additionally, for the mixed-dimensional heterosystem of BN/SnS2, the BNNT (5,5)/SnS2 and BNNT(5,0)/SnS2 present the characteristics of indirect and direct band structures, respectively. Thus, our calculations show that the SnS2/BN heterostructures possess the tunable electronic structures and transport properties. (C) 2019 Author(s).
引用
收藏
页数:6
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