Switching characteristic of fabricated nonvolatile bipolar resistive switching memory (ReRAM) using PEDOT: PSS/GO

In this study, a bipolar resistive switching random access memory cell (ReRAM) by blending PEDOT: PSS into Graphene Oxide (GO) with 1:1 wt% is reported. To compare the switching mechanism, the memory devices based on GO and PEDOT: PSS are distinctly fabricated and characterized too. The spin coated active layers are sandwiched between ITO and Al as the bottom and top electrodes, respectively. The resistive switching mechanism in PEDOT: PSS/GO memory is based on filamentary type. The SET and RESET operation of the PEDOT: PSS/GO memory is relatively symmetric but GO and PEDOT: PSS samples have a significant asymmetric hysteresis curve. The carrier transport mechanism of the bistable behaviour for the fabricated non-volatile ReRAM is described based on space charge limited current (SCLC). In our experiments, the structure ITO/PEDOT:PSS-GO/ Al demonstrated good switching behaviour with approximately 100 on/off current ratio, 3.5 V set/reset voltage and, a high retention time of 6000 s. In addition, the crystallinity and surface topography of the deposited thin film was characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscopy (SEM). The simple structure and low-cost fabrication offer embedding in data storage and computing application as future electronics and printed electronics.