Molecular Dynamics Simulations of Strain Engineering and Thermal Transport in Nanostructured Materials

被引:0
|
作者
Park, Yumi [1 ]
Zhou, Ya
Jhaveri, Janam [1 ]
Strachan, Alejandro
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
基金
美国国家科学基金会;
关键词
REACTIVE FORCE-FIELD; SILICON; CONDUCTIVITY;
D O I
10.1109/MCSE.2010.44
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
Given the large surface-to-volume ratio of nanoscale and nanostructured materials and devices, their performance is often dominated by processes occurring at free surfaces or interfaces. By connecting a material's atomic structure and thermo-mechanical response, molecular dynamics is helping researchers better understand and quantify these processes. © 2006 IEEE.
引用
收藏
页码:36 / 42
页数:7
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