Molecular Dynamics Simulations of Strain Engineering and Thermal Transport in Nanostructured Materials

被引：0

作者：

Park, Yumi ^{[1
]}

Zhou, Ya

Jhaveri, Janam ^{[1
]}

Strachan, Alejandro

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

来源：

COMPUTING IN SCIENCE & ENGINEERING | 2010年 / 12卷 / 02期

基金：

美国国家科学基金会;

关键词：

REACTIVE FORCE-FIELD; SILICON; CONDUCTIVITY;

D O I：

10.1109/MCSE.2010.44

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Given the large surface-to-volume ratio of nanoscale and nanostructured materials and devices, their performance is often dominated by processes occurring at free surfaces or interfaces. By connecting a material's atomic structure and thermo-mechanical response, molecular dynamics is helping researchers better understand and quantify these processes. © 2006 IEEE.

引用

页码：36 / 42

页数：7

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