Visible-blind ultraviolet sensitive photodiode with high responsivity and long term stability

被引:31
|
作者
Wu, Shuang-hong [1 ,2 ]
Li, Wen-lian [1 ,2 ]
Chu, Bei [1 ,2 ]
Lee, C. S. [3 ]
Su, Zi-sheng [1 ,2 ]
Wang, Jun-bo [1 ,2 ]
Ren, Qing-jiang [1 ,2 ]
Hu, Zhi-zhi [4 ]
Zhang, Zhi-qiang [4 ]
机构
[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
[3] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[4] Univ Sci & Technol Liaoning, Sch Chem Engn, Anshan 114051, Peoples R China
基金
中国国家自然科学基金;
关键词
dyes; electric resistance; electrodes; infrared spectra; nanofibres; solar cells; titanium compounds; ultraviolet spectra; visible spectra; zirconium compounds; LIGHT-EMITTING-DIODES; PHOTODETECTORS;
D O I
10.1063/1.3463483
中图分类号
O59 [应用物理学];
学科分类号
摘要
A high responsivity organic visible-blind ultraviolet photodiode is achieved using aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq) and 4,4',4 ''-tri-(2-methylphenyl phenylamino) triphenylaine (m-MTDATA) as the electron acceptor and donor, respectively. Under 365 nm illumination with an intensity of 1.2 mW/cm(2), the photodiode behaves a maximum photoresponse of 514 mA/W at -7 V, which is markedly higher than previous reports in our group by Su et al. [Appl. Phys. Lett. 93, 103309 (2008)] and inorganic counterparts based on GaN (150 mA/W) and Si (120 mA/W), respectively. The operational time of the unsealed photodiode is larger than 1000 min when the photocurrent decreases to 67% of its original intensity in air environment. Harvest of so high performance photodiode is mainly attributed to the larger band offsets at m-MTDATA/BAlq heterojunction and skillful device design, etc. The improvement mechanisms are also augured in detail. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463483]
引用
收藏
页数:3
相关论文
共 50 条
  • [31] Ultrathin In2O3 Nanosheets toward High Responsivity and Rejection Ratio Visible-Blind UV Photodetection
    Zhang, Mingxi
    Yu, Huan
    Li, Hang
    Jiang, Yan
    Qu, Lihang
    Wang, Yunxia
    Gao, Feng
    Feng, Wei
    SMALL, 2023, 19 (01)
  • [32] High spectrum selectivity organic/inorganic hybrid visible-blind ultraviolet photodetector based on ZnO nanorods
    Wang, Lidan
    Zhao, Dongxu
    Su, Zisheng
    Fang, Fang
    Li, Binghui
    Zhang, Zhenzhong
    Shen, Dezhen
    Wang, Xiaohua
    ORGANIC ELECTRONICS, 2010, 11 (07) : 1318 - 1322
  • [33] Halide-exchanged perovskite photodetectors for wearable visible-blind ultraviolet monitoring
    Zhou, Yu
    Qiu, Xiao
    Wan, Zhu'an
    Long, Zhenghao
    Poddar, Swapnadeep
    Zhang, Qianpeng
    Ding, Yucheng
    Chan, Chak Lam Jonathan
    Zhang, Daquan
    Zhou, Kemeng
    Lin, Yuanjing
    Fan, Zhiyong
    NANO ENERGY, 2022, 100
  • [34] VISIBLE-BLIND ULTRAVIOLET PHOTODETECTORS BASED ON GAN P-N-JUNCTIONS
    CHEN, Q
    KHAN, MA
    SUN, CJ
    YANG, JW
    ELECTRONICS LETTERS, 1995, 31 (20) : 1781 - 1782
  • [35] Visible-blind organic ultraviolet detector based on phosphorescent Cu (I) complex
    Kong, Zhi-Guo
    Li, Wen-Lian
    Wang, Dan
    Chen, Li-Li
    Zhang, Guang
    Gongneng Cailiao/Journal of Functional Materials, 2007, 38 (10): : 1575 - 1576
  • [36] Photoresponse studies of ZnSSe visible-blind ultraviolet detectors: A comparison to ZnSTe detectors
    Sou, IK
    Ma, ZH
    Wong, GKL
    APPLIED PHYSICS LETTERS, 1999, 75 (23) : 3707 - 3709
  • [37] Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
    Prasai, Deepak
    John, Wilfred
    Weixelbaum, Leonhard
    Krueger, Olaf
    Wagner, Guenter
    Sperfeld, Peter
    Nowy, Stefan
    Friedrich, Dirk
    Winter, Stefan
    Weiss, Tilman
    JOURNAL OF MATERIALS RESEARCH, 2013, 28 (01) : 33 - 37
  • [38] Highly reliable silicon carbide photodiodes for visible-blind ultraviolet detector applications
    Deepak Prasai
    Wilfred John
    Leonhard Weixelbaum
    Olaf Krüger
    Günter Wagner
    Peter Sperfeld
    Stefan Nowy
    Dirk Friedrich
    Stefan Winter
    Tilman Weiss
    Journal of Materials Research, 2013, 28 (1) : 33 - 37
  • [39] 8x8 GaN Schottky barrier photodiode array for visible-blind imaging
    Lim, BW
    Gangopadhyay, S
    Yang, JW
    Osinsky, A
    Chen, Q
    Anwar, MZ
    Khan, MA
    ELECTRONICS LETTERS, 1997, 33 (07) : 633 - 634
  • [40] Visible-blind ultraviolet photodetectors based on AlxGa1-xN alloys
    Monroy, E
    Calle, F
    Muñoz, E
    Omnès, F
    Beaumont, B
    Gibart, P
    COMPOUND SEMICONDUCTORS 1999, 2000, (166): : 431 - 434