Visible-blind ultraviolet sensitive photodiode with high responsivity and long term stability

被引:31
|
作者
Wu, Shuang-hong [1 ,2 ]
Li, Wen-lian [1 ,2 ]
Chu, Bei [1 ,2 ]
Lee, C. S. [3 ]
Su, Zi-sheng [1 ,2 ]
Wang, Jun-bo [1 ,2 ]
Ren, Qing-jiang [1 ,2 ]
Hu, Zhi-zhi [4 ]
Zhang, Zhi-qiang [4 ]
机构
[1] Chinese Acad Sci, Key Lab Excited State Proc, Changchun Inst Opt Fine Mech & Phys, Changchun 130033, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China
[3] City Univ Hong Kong, COSDAF, Hong Kong, Hong Kong, Peoples R China
[4] Univ Sci & Technol Liaoning, Sch Chem Engn, Anshan 114051, Peoples R China
基金
中国国家自然科学基金;
关键词
dyes; electric resistance; electrodes; infrared spectra; nanofibres; solar cells; titanium compounds; ultraviolet spectra; visible spectra; zirconium compounds; LIGHT-EMITTING-DIODES; PHOTODETECTORS;
D O I
10.1063/1.3463483
中图分类号
O59 [应用物理学];
学科分类号
摘要
A high responsivity organic visible-blind ultraviolet photodiode is achieved using aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolate (BAlq) and 4,4',4 ''-tri-(2-methylphenyl phenylamino) triphenylaine (m-MTDATA) as the electron acceptor and donor, respectively. Under 365 nm illumination with an intensity of 1.2 mW/cm(2), the photodiode behaves a maximum photoresponse of 514 mA/W at -7 V, which is markedly higher than previous reports in our group by Su et al. [Appl. Phys. Lett. 93, 103309 (2008)] and inorganic counterparts based on GaN (150 mA/W) and Si (120 mA/W), respectively. The operational time of the unsealed photodiode is larger than 1000 min when the photocurrent decreases to 67% of its original intensity in air environment. Harvest of so high performance photodiode is mainly attributed to the larger band offsets at m-MTDATA/BAlq heterojunction and skillful device design, etc. The improvement mechanisms are also augured in detail. (C) 2010 American Institute of Physics. [doi:10.1063/1.3463483]
引用
收藏
页数:3
相关论文
共 50 条
  • [1] A PFTBT modified visible-blind ultraviolet photodetector with a narrow detecting range and high responsivity
    Xu, Ruiliang
    Zhang, Dezhong
    He, Lijuan
    Li, Kanzhe
    Ruan, Shengping
    Zhang, Haifeng
    Zhou, Jingran
    Chen, Yu
    NANOTECHNOLOGY, 2018, 29 (46)
  • [2] Transparent polymer Schottky contact for a high performance visible-blind ultraviolet photodiode based on ZnO
    Nakano, M.
    Makino, T.
    Tsukazaki, A.
    Ueno, K.
    Ohtomo, A.
    Fukumura, T.
    Yuji, H.
    Akasaka, S.
    Tamura, K.
    Nakahara, K.
    Tanabe, T.
    Kamisawa, A.
    Kawasaki, M.
    APPLIED PHYSICS LETTERS, 2008, 93 (12)
  • [3] High response organic visible-blind ultraviolet detector
    Ray, Debdutta
    Narasimhan, K. L.
    APPLIED PHYSICS LETTERS, 2007, 91 (09)
  • [4] Visible-blind ultraviolet photodiode fabricated by UVoxidation of metallic zinc on p-Si
    Zhang, Dongyuan
    Uchida, Kazuo
    Nozaki, Shinji
    JOURNAL OF APPLIED PHYSICS, 2015, 118 (09)
  • [5] High-sensitivity visible-blind AlGaN photodiodes and photodiode arrays
    Brown, JD
    Matthews, J
    Harney, S
    Boney, J
    Schetzina, JF
    Benson, JD
    Dang, KV
    Nohava, T
    Yang, W
    Krishnankutty, S
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W1.9
  • [6] High performance ZnSTe photovoltaic visible-blind ultraviolet detectors
    Sou, IK
    Man, CL
    Ma, ZH
    Yang, Z
    Wong, GKL
    APPLIED PHYSICS LETTERS, 1997, 71 (26) : 3847 - 3849
  • [7] High performance ZnSTe photovoltaic visible-blind ultraviolet detectors
    Hong Kong Univ of Science and, Technology, Kowloon, Hong Kong
    Appl Phys Lett, 26 (3847-3849):
  • [9] GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity
    Varghese, Arathy
    Eblabla, Abdalla
    Wu, Zehao
    Ghozati, Seyed Urman
    Elgaid, Khaled
    IEEE SENSORS JOURNAL, 2022, 22 (12) : 12307 - 12313
  • [10] Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
    VanHove, JM
    Hickman, R
    Klaassen, JJ
    Chow, PP
    Ruden, PP
    APPLIED PHYSICS LETTERS, 1997, 70 (17) : 2282 - 2284