Fabrication and surface passivation of porous 6H-SiC by atomic layer deposited films

被引:9
|
作者
Lu, Weifang [1 ]
Ou, Yiyu [1 ]
Petersen, Paul Michael [1 ]
Ou, Haiyan [1 ]
机构
[1] Tech Univ Denmark, Dept Photon Engn, DK-2800 Lyngby, Denmark
来源
OPTICAL MATERIALS EXPRESS | 2016年 / 6卷 / 06期
关键词
TIO2; FILMS; PHOTOLUMINESCENCE; EMISSION; MICROSTRUCTURE; TRANSMISSION; ABSORPTION; EFFICIENCY; GROWTH;
D O I
10.1364/OME.6.001956
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Porous 6H-SiC samples with different thicknesses were fabricated through anodic etching in diluted hydrofluoric acid. Scanning electron microscope images show that the dendritic pore formation in 6H-SiC is anisotropic, which has different lateral and vertical formation rates. Strong photoluminescence was observed and the etching process was optimized in terms of etching time and thickness. Enormous enhancement as well as redshift and broadening of photoluminescence spectra were observed after the passivation by atomic layer deposited Al2O3 and TiO2 films. No obvious luminescence was observed above the 6H-SiC crystal band gap, which suggests that the strong photoluminescence is ascribed to surface state produced during the anodic etching. (C) 2016 Optical Society of America
引用
收藏
页码:1956 / 1963
页数:8
相关论文
共 50 条
  • [41] Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate
    Z. -Q. Fang
    D. C. Look
    R. Chandrasekaran
    S. Rao
    S. E. Saddow
    Journal of Electronic Materials, 2004, 33 : 456 - 459
  • [42] Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate
    Fang, ZQ
    Look, DC
    Chandrasekaran, R
    Rao, S
    Saddow, SE
    JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (05) : 456 - 459
  • [43] Structural and Photoluminescence Properties of ZnO Films Grown on 6H-SiC Substrates by Low-Temperature Atomic Layer Deposition
    Lin, Ming-Chih
    Wu, Mong-Kai
    Yuan, Kai-Yun
    Chen, Miin-Jang
    Yang, Jer-Ren
    Shiojiri, Makoto
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (12) : H1213 - H1217
  • [44] Structure of few-layer epitaxial graphene on 6H-SiC(0001) at atomic resolution
    Weng, Xiaojun
    Robinson, Joshua A.
    Trumbull, Kathleen
    Cavalero, Randall
    Fanton, Mark A.
    Snyder, David
    APPLIED PHYSICS LETTERS, 2010, 97 (20)
  • [45] Atomic layer deposited WNxCy films growth on SiC surfaces
    Hoyas, A. Martin
    Whelan, C. M.
    Schuhmacher, J.
    Maex, K.
    Celis, J. P.
    MICROELECTRONIC ENGINEERING, 2006, 83 (11-12) : 2068 - 2071
  • [46] Surface and interface structural analysis of W deposited on 6H-SiC substrates annealed in argon
    Thabethe, T. T.
    Njoroge, E. G.
    Hlatshwayo, T. T.
    Ntsoane, T. P.
    Malherbe, J. B.
    RSC ADVANCES, 2017, 7 (01): : 2 - 7
  • [47] Characterization of the 6H-SiC(0001) surface and the interface with Ti layer with the Schottky limit
    Hara, S
    APPLIED SURFACE SCIENCE, 2000, 162 : 19 - 24
  • [48] Atomic structures of 6H-SiC(0001) and (0001) surfaces
    Li, L
    Tsong, IST
    SURFACE SCIENCE, 1996, 351 (1-3) : 141 - 148
  • [49] Relaxation of 6H-SiC (0001) Surface and Si Adsorption on 6H-SiC (0001): an ab initio Study
    He Xiao-Min
    Chen Zhi-Ming
    Li Lian-Bi
    CHINESE PHYSICS LETTERS, 2015, 32 (03)
  • [50] Relaxation of 6H-SiC(0001) Surface and Si Adsorption on 6H-SiC(0001):an ab initio Study
    贺小敏
    陈治明
    李连碧
    Chinese Physics Letters, 2015, 32 (03) : 101 - 104