CIGS devices with ZIS, In2S3, and CdS buffer layers

被引：10

作者：

Delahoy, AE ^{[1
]}

Akhtar, M ^{[1
]}

Cambridge, J ^{[1
]}

Chen, L ^{[1
]}

Govindarajan, R ^{[1
]}

Guo, S ^{[1
]}

Romero, MJ ^{[1
]}

机构：

[1] Energy Photovoltac Inc, Princeton, NJ 08543 USA

来源：

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002 | 2002年

关键词：

D O I：

10.1109/PVSC.2002.1190646

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The device performances of Cu(in,Ga)Se-2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by, chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3, and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.

引用

页码：640 / 643

页数：4

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