CIGS devices with ZIS, In2S3, and CdS buffer layers

被引:10
|
作者
Delahoy, AE [1 ]
Akhtar, M [1 ]
Cambridge, J [1 ]
Chen, L [1 ]
Govindarajan, R [1 ]
Guo, S [1 ]
Romero, MJ [1 ]
机构
[1] Energy Photovoltac Inc, Princeton, NJ 08543 USA
关键词
D O I
10.1109/PVSC.2002.1190646
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The device performances of Cu(in,Ga)Se-2 solar cells are compared as a function of various buffer layers applied by thermal evaporation that are considered as candidates to replace the conventional CdS buffer layer applied by, chemical bath deposition. The buffer layers include ZnIn2Se4 (ZIS), In2Se3, and ZnSe. Devices with CdS and ZIS buffers are also studied by EBIC and cathodoluminescence.
引用
收藏
页码:640 / 643
页数:4
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