A Compact, Low-Power 40 Gbit/s Differential Laser Driver in SiGe BiCMOS Technology

被引：0

作者：

Knochenhauer, Christian ^{[1
]}

Hauptmann, Stefan ^{[1
]}

Scheytt, Christoph ^{[2
]}

Ellinger, Frank ^{[1
]}

机构：

[1] Tech Univ Dresden, Chair Circuit Design & Network Theory, D-01062 Dresden, Germany

[2] IHP Microelectron, Circuit Design Dept, Frankfurt, Germany

来源：

2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009) | 2009年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A differential laser driver for 40 Gbit/s optical communications delivering a 10 mA current swing to a laser modeled as a 50 Omega resistance in parallel to a 100 IF capacitance is presented. The circuit employs multiple frequency compensation techniques to achieve very high speed without space-consuming inductors. The driver was implemented in a 180 GHz-f(T,max) SiGe BiCMOS technology. Measurements showed 15 dB gain with 26 GHz bandwidth and open eyes up to 50 Gbit/s. The driver's power consumption was only 80 mW making it the fastest and most power efficient of all inductor-free 40 Gbit/s SiGe laser drivers published to date.

引用

页码：324 / +

页数：2

共 50 条

[31] Low-Power 50 Gbps Driver Circuit for High-Capacitance Electro-Absorption Modulators in 130nm SiGe BiCMOS Technology
Abdollahi, Behnam
Zimmermann, Horst
2024 AUSTROCHIP WORKSHOP ON MICROELECTRONICS, AUSTROCHIP 2024, 2024,
[32] A Low-Power, Low-Noise, Highly-Linear Receiver for 122 GHz Applications in a SiGe BiCMOS Technology
Chakraborty, Abhiram
Trotta, Saverio
Aufinger, Klaus
Lachner, Rudolf
Weigel, Robert
2014 IEEE 14TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2014, : 50 - 52
[33] Compact 40 Gbit/s EML Module Integrated with Driver IC
Yagisawa, Takatoshi
Ikeuchi, Tadashi
IEICE TRANSACTIONS ON ELECTRONICS, 2009, E92C (07) : 951 - 956
[34] An ultra-wideband low power consumption differential low noise amplifier in SiGe:C BiCMOS technology
Datta, PK
Fischer, G
2006 IEEE RADIO AND WIRELESS SYMPOSIUM, PROCEEDINGS, 2006, : 107 - 110
[35] Design Considerations for a 100 Gbit/s SiGe-BiCMOS Power Multiplexer With 2 Vpp Differential Voltage Swing
Uhl, Christopher
Hettrich, Horst
Moeller, Michael
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2018, 53 (09) : 2479 - 2487
[36] A Compact Low-Power Driver Array for VCSELs in 65-nm CMOS Technology
Zeng, Zhiyao
Sun, Kexu
Wang, Guanhua
Zhang, Tao
Kulis, Szymon
Gui, Ping
Moreira, Paulo
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2017, 64 (06) : 1599 - 1604
[37] 40 Gbit/s transimpedance amplifier with high linearity range in 0.13 μm SiGe BiCMOS
Knochenhauer, C.
Sedighi, B.
Ellinger, F.
ELECTRONICS LETTERS, 2011, 47 (10) : 605 - 606
[38] 10Gb/s single-ended laser driver in 0.35μm SiGe BiCMOS technology
Tsai, CM
Huang, LR
Li, DV
Chang, CF
ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, : 289 - 292
[39] 20 Gbit/s transimpedance preamplifier and modulator driver in SiGe bipolar technology
Schmid, R
Meister, TF
Neuhauser, M
Felder, A
Bogner, W
Rest, M
Rupeter, J
Rein, HM
ELECTRONICS LETTERS, 1997, 33 (13) : 1136 - 1137
[40] Compact, Low-Power, Single-Ended and Differential SiGe W-band LNAs
Inanlou, Farzad
Khan, Wasif
Song, Peter
Zeinolabedinzadeh, Saeed
Schmid, Robert L.
Chi, Taiyun
Ulusoy, Ahmet C.
Papapolymerou, John
Wang, Hua
Cressler, John D.
2014 44TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2014, : 1396 - 1399

← 1 2 3 4 5 →