Annealing Temperature Dependence of ZTO Thin Film Properties and Its Application on Thin Film Transistors by Inkjet Printing

被引：11

作者：

Ryu, Sang Ouk ^{[1
]}

Ha, Cheul Ho ^{[2
]}

Jun, Ho Young ^{[2
]}

Ryu, Si Ok ^{[2
]}

机构：

[1] Dankook Univ, Dept Elect & Elect Engn, Yongin 16890, South Korea

[2] Yeungnam Univ, Sch Chem Engn, Gyongsan 38541, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2020年 / 49卷 / 03期

关键词：

Zinc tin oxide; thin film; thin film transistor; inkjet-printer; solution-based process; FABRICATION;

D O I：

10.1007/s11664-019-07871-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, inkjet-printed zinc tin oxide:Cl (ZTO:Cl) thin films were analyzed using x-ray diffraction, x-ray photoelectron spectroscopy (XPS) and all the films were annealed at temperatures ranging from 100 degrees C to 600 degrees C. XPS analysis showed that the formation of metal-oxide bonds in the films was complete with annealing temperatures at or above 500 degrees C. Furthermore, inkjet-printed thin film transistors (TFTs) were examined using scanning electron microscopy and current-voltage characteristic measurements. The ZTO:Cl TFTs performed best when annealed at 500 degrees C. The average carrier mobility and the on/off ratio were found to be 2.71 cm(2)/V s and 1.82x10(7), respectively.

引用

页码：2003 / 2007

页数：5

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