Sulfur passivation of Ga2O3(Gd2O3)/GaAs metal-oxide-semiconductor structures

被引：5
|
作者：
Eftekhari, G [1 ]
机构：
[1] SUNY Albany, Dept Elect & Comp Engn, New Paltz, NY 12561 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 05期
关键词：
D O I：
10.1116/1.1310658
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The properties of Ga2O3 films evaporated on unpassivated and passivated GaAs surfaces using a Gd3Ga5O12 source were studied. The properties of unpassivated (passivated) films were a strong (weak) function of substrate temperature with best results obtained at a substrate temperature of about 100 degreesC. The thermal stability of films evaporated at a substrate temperature of 100 degreesC was studied as well. The passivated films showed a better thermal stability. The bonds formed at the surface layer of passivated GaAs were used to explain the results. (C) 2000 American Vacuum Society. [S0734-211X(00)04005-1].
引用
收藏
页码：2569 / 2572
页数：4
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