Effective control of phosphorus clusters' electronic and spin properties in graphene/BN heterostructure via electric fields

Developing simple methods to manipulate and detect the materials' spin orientation is among the key issues for spintronics applications. The advantage of using electric field to control spin orientation is that the field can be easily applied locally. The magnetic moment and spin polarization of the tri-P atoms in P-doped graphene(G)/boron nitride(BN) and BN/P-doped G/BN heterostructures with effective control via an external electric field are studied. The spin properties in the mono- ,di-P atoms doped G/BN, mono-vacancy G/BN, tri-N and tri-O atoms doped mono-vacancy G/BN systems are little dependent on the external electronic field. The electric field can induce a transformation from bipolar magnetic semiconductor (BMS) character to spin gapless semiconductor (SGS) character for tri-P-G/BN system. The novel property of electrical controlling spin polarization presents at a high Curie temperature. The results provide perspectives for a control of spin orientation in atomically-thin layers.