MOSFET degradation dependence on input signal power in a RF power amplifier

被引：15

作者：

Crespo-Yepes, A. ^{[1
]}

Barajas, E. ^{[2
]}

Martin-Martinez, J. ^{[1
]}

Mateo, D. ^{[2
]}

Aragones, X. ^{[2
]}

Rodriguez, R. ^{[1
]}

Nafria, M. ^{[1
]}

机构：

[1] Univ Autonoma Barcelona, Dept Engn Elect, Edifici Q, E-08193 Barcelona, Spain

[2] Univ Politecn Cataluna, Dept Engn Elect, Edifici C4, ES-08034 Barcelona, Spain

来源：

MICROELECTRONIC ENGINEERING | 2017年 / 178卷

关键词：

CMOS; MOSFET degradation; RF power amplifier; RF stress; Aging; STRESS; LNA;

D O I：

10.1016/j.mee.2017.05.021

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Aging produced by RF stress is experimentally analyzed on a RF CMOS power amplifier (PA), as a function of the stress power level. The selected circuit topology allows observing individual NMOS and PMOS transistors degradations, as well as the aging effect on the circuit functionality. A direct relation between DC MOSFETs and RF PA (gain) parameters has been observed. NMOS degradation (both in mobility and Vth) is stronger than that of the PMOS. Results suggest that transistors mobility reduction is the main cause of the RF degradation in this circuit. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：289 / 292

页数：4

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