Surface photovoltage spectroscopy of quantum structures

被引：0
|
作者：
Datta, S [1 ]
Arora, BM [1 ]
Venkatraghavan, R [1 ]
Kumar, S [1 ]
机构：
[1] Tata Inst Fundamental Res, Bombay 400005, Maharashtra, India
来源：
PROCEEDING OF THE TENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOLS I AND II | 2000年 / 3975卷
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D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the surface photovoltage spectroscopy of quantum wens and use it to characterize various transition lines at room temperature. The temperature dependence of surface photo voltage of a quantum well is also studied. The broadening of transition energies below 100 K is attributed to some different mechanism of surface photovoltage generation below 100 K. Further experiments are going on to verify our speculation.
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页码：1045 / 1048
页数：4
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