A simple quantum model for the MOS structure in accumulation mode

被引：20
|
作者：
Vexler, MI [1 ]
机构：
[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
来源：
SOLID-STATE ELECTRONICS | 2003年 / 47卷 / 08期
关键词：
MOS structure; accumulation layer; compact model; quantization;
D O I：
10.1016/S0038-1101(03)00062-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple model for the accumulation mode of a MOS structure is proposed. The model regards the ground quantum level and is based on the approximated empirical expression for the band profile in semiconductor. The results for the dependency of a surface potential on the electric field in oxide were screened with the exact self-consistent solution and shown to be in a satisfactory agreement with it. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1283 / 1287
页数：5
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