Direct measurement of electron beam induced currents in p-type silicon

被引：5

作者：

Han, Myung-Geun ^{[1
,2
]}

Zhu, Yimei ^{[1
]}

Sasaki, Katsuhiro ^{[3
]}

Kato, Takeharu ^{[2
]}

Fisher, Craig A. J. ^{[2
]}

Hirayama, Tsukasa ^{[2
]}

机构：

[1] Brookhaven Natl Lab, Upton, NY 11973 USA

[2] Japan Fine Ceram Ctr, Nanostruct Res Lab, Atsuta Ku, Nagoya, Aichi 4568587, Japan

[3] Nagoya Univ, Dept Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 08期

关键词：

Transmission electron microscopy; EBIC; Carrier transport; Semiconductor; STEADY-STATE; MICROSCOPY;

D O I：

10.1016/j.sse.2010.03.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method for measuring electron beam induced currents (EBICs) in p-type silicon using a transmission electron microscope (TEM) with a high-precision tungsten probe is presented. Current-voltage (I-V) curves obtained under various electron-beam illumination conditions are found to depend strongly on the current density of the incoming electron beam and the relative distance of the beam from the point of probe contact, consistent with a buildup of excess electrons around the contact. This setup provides a new experimental approach for studying minority carrier transport in semiconductors on the nanometer scale. Published by Elsevier Ltd.

引用

页码：777 / 780

页数：4

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