Structural and spectroscopic investigation of an efficient and broadband NIR phosphor InBO3: Cr3+ and its application in NIR pc-LEDs

被引：78
|
作者：
Sun, Zishan [1 ]
Ning, Qixia [2 ]
Zhou, Weiying [1 ]
Luo, Jiabao [1 ]
Chen, Peican [3 ]
Zhou, Liya [3 ]
Pang, Qi [3 ]
Zhang, Xinguo [1 ]
机构：
[1] Southern Med Univ, Sch Pharmaceut Sci, Guangdong Prov Key Lab New Drug Screening, Guangzhou 510515, Peoples R China
[2] Guangxi Inst Food & Drug Control, Nanning 530021, Peoples R China
[3] Guangxi Univ, Sch Chem & Chem Engn, Nanning 530004, Peoples R China
来源：
CERAMICS INTERNATIONAL | 2021年 / 47卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Near-infrared phosphor; Broadband emission; Cr3+ doping; NIR LED; CR3+-DOPED PHOSPHORS; THERMAL-STABILITY; EMISSION; LUMINESCENCE; CE3+;
D O I：
10.1016/j.ceramint.2021.01.218
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A broadband NIR phosphor Cr3+-doped InBO3 was successfully prepared and systematically investigated. XRD refinement result reveals that Cr3+ ions locate the octahedral InO6 site in the InBO3 host. Under low crystal field strength (D-q/B = 1.78), InBO3: Cr3+ phosphor exhibits a broadband NIR emission at 820 nm (QE = 46.3%, FWHM = 138 nm) and has a high emission thermal stability, i.e. T-1/2 = similar to 150 degrees C. The pc-LED prototype using InBO3: Cr3+ phosphor shows a high NIR output power of 37.5 mW with high conversion efficiency of 10.42%. Thus, the efficient broadband NIR emission makes Cr3+-doped InBO3 a good candidate as converted phosphor for high-power broadband NIR sources emitting in the NIR-I region.
引用
收藏
页码：13598 / 13603
页数：6
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