In-assisted growth of InN nanocolumn on Si(111) substrate by molecular beam epitaxy

被引：5

作者：

Yang, Hang ^{[1
]}

Yin, Jingzhi ^{[1
]}

Li, Wancheng ^{[1
]}

Gao, Fubin ^{[1
]}

Zhao, Yang ^{[1
]}

Wu, Guoguang ^{[1
]}

Zhang, Baolin ^{[1
]}

Du, Guotong ^{[1
]}

机构：

[1] Jilin Univ, Coll Elect Sci & Engn, State Key Lab Integrated Optoelect, Qianjin St 2699, Changchun 130012, Peoples R China

来源：

VACUUM | 2016年 / 128卷

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

InN nanocolumns; Molecular beam epitaxy; Catalyst thickness; Vapor-liquid-solid method; SAPPHIRE;

D O I：

10.1016/j.vacuum.2016.03.022

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have demonstrated that the thickness of the catalyst layer plays a significant role in the morphology and the material quality of the InN nanocolumns grown on Si(111) substrate by plasma-assisted molecular beam expitaxy using vapor-liquid-solid method. A systematic investigation of In catalyst films was undertaken, revealing that high density uniform InN can not be obtained when the In catalyst is either too thin or too thick and the appropriate thickness of the deposited In was 1 nm. The influence of VIII radio on the growth procedure is also discussed, and as proved, a higher V/III radio is necessary to be used to get high density nanocolumns and improved optical property. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：133 / 136

页数：4

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