Critical thickness and growth modes of SiC layers on Si substrates - a molecular dynamics study

被引：2

作者：

Bhatti, QA ^{[1
]}

Matthai, CC ^{[1
]}

机构：

[1] Univ Wales Coll Cardiff, Dept Phys & Astron, Cardiff CF2 3YB, S Glam, Wales

来源：

APPLIED SURFACE SCIENCE | 1998年 / 123卷

关键词：

D O I：

10.1016/S0169-4332(97)00499-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have performed molecular dynamics simulations of thin layers of SiC on Si substrates to determine the critical thickness for strain relief by islanding and misfit dislocation formation. We find that layer-by-layer growth followed by the formation of misfit dislocations at the interface is the preferred mode of growth. (C) 1998 Elsevier Science B.V.

引用

页码：7 / 10

页数：4

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