Investigation of the light field of a semiconductor diode laser

被引：5

作者：

Ankudinov, A. V. ^{[1
,2
]}

Yanul, M. L. ^{[3
]}

Slipchenko, S. O. ^{[1
]}

Shelaev, A. V. ^{[3
]}

Dorozhkin, P. S. ^{[3
]}

Podoskin, A. A. ^{[1
]}

Tarasov, I. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia

[3] NT MDT Co, Moscow 124482, Russia

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 21期

关键词：

OPTICAL MICROSCOPY; POWER; MODE; HETEROSTRUCTURES;

D O I：

10.1364/OE.22.026438

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Scanning near-field optical microscopy was applied to study, with sub-wavelength spatial resolution, the near- and the far-field distributions of propagating modes from a high-power laser diode. Simple modeling was also performed and compared with experimental results. The simulated distributions were consistent with the experiment and permitted clarification of the configuration of the transverse modes of the laser. (C) 2014 Optical Society of America

引用

页码：26438 / 26448

页数：11

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