Investigation of the light field of a semiconductor diode laser

被引：5

作者：

Ankudinov, A. V. ^{[1
,2
]}

Yanul, M. L. ^{[3
]}

Slipchenko, S. O. ^{[1
]}

Shelaev, A. V. ^{[3
]}

Dorozhkin, P. S. ^{[3
]}

Podoskin, A. A. ^{[1
]}

Tarasov, I. S. ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[2] St Petersburg Natl Res Univ Informat Technol Mech, St Petersburg 197101, Russia

[3] NT MDT Co, Moscow 124482, Russia

来源：

OPTICS EXPRESS | 2014年 / 22卷 / 21期

关键词：

OPTICAL MICROSCOPY; POWER; MODE; HETEROSTRUCTURES;

D O I：

10.1364/OE.22.026438

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Scanning near-field optical microscopy was applied to study, with sub-wavelength spatial resolution, the near- and the far-field distributions of propagating modes from a high-power laser diode. Simple modeling was also performed and compared with experimental results. The simulated distributions were consistent with the experiment and permitted clarification of the configuration of the transverse modes of the laser. (C) 2014 Optical Society of America

引用

页码：26438 / 26448

页数：11

共 50 条

[1] Collimating light beams semiconductor laser diode array
An, ZF
Liu, HM
Tian, XW
Wang, MY
Wang, CL
SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1 AND 2, PROCEEDINGS, 2001, : 1244 - 1248
[2] Gain switch of an AlGaInP red light semiconductor laser diode
Nano Optoelectronic Laboratory, Institute of Semiconductors, Chinese Acad. of Sci., Beijing 100083, China
Pan Tao Ti Hsueh Pao, 2008, 7 (1274-1277):
[3] CHARACTERISTICS OF LIGHT AMPLIFIER OF ALGAAS SEMICONDUCTOR DIODE-LASER
KONO, K
SAKUDA, K
JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 88 - 96
[4] Investigation of electric field threshold of GaAs photoconductive semiconductor switch triggered by 1.6 μJ laser diode
Shi, Wei
Jiang, Huan
Li, Mengxia
Ma, Cheng
Gui, Huaimeng
Wang, Luyi
Xue, Pengbo
Fu, Zhanglong
Cao, Juncheng
APPLIED PHYSICS LETTERS, 2014, 104 (04)
[5] SUPERCONDUCTIVIITY OF A SEMICONDUCTOR PLACED IN A LASER LIGHT FIELD
BLAZHIN, VD
SELIVANE.AS
SOVIET PHYSICS SOLID STATE,USSR, 1971, 12 (11): : 2610 - +
[6] Nanoimprinted Organic Semiconductor Laser Pumped by a Light-Emitting Diode
Tsiminis, Georgios
Wang, Yue
Kanibolotsky, Alexander L.
Inigo, Anto R.
Skabara, Peter J.
Samuel, Ifor D. W.
Turnbull, Graham A.
ADVANCED MATERIALS, 2013, 25 (20) : 2826 - 2830
[7] Semiconductor Laser Integrated with a Thermoelectrophotonic Light Emitting Diode Heat Pump
Deppe, D. G.
Liu, X.
Zhao, G.
Zhang, Y.
2012 IEEE PHOTONICS CONFERENCE (IPC), 2012, : 852 - 853
[8] Investigation of Temperature Shift of Wavelength of Semiconductor Laser Diode in Doppler Anemometer
Pavlov, V. A.
Bakakin, G., V
Rakhmanov, V. V.
Dvoynishnikov, S., V
OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2022, 58 (03) : 215 - 222
[9] Investigation of Temperature Shift of Wavelength of Semiconductor Laser Diode in Doppler Anemometer
V. A. Pavlov
G. V. Bakakin
V. V. Rakhmanov
S. V. Dvoynishnikov
Optoelectronics, Instrumentation and Data Processing, 2022, 58 : 215 - 222
[10] Semiconductor laser diode array characterization by means of field intensity measurements
Zeni, LG
Cutolo, A
Pierri, R
TESTING, PACKAGING, RELIABILITY, AND APPLICATIONS OF SEMICONDUCTOR LASERS IV, 1999, 3626 : 167 - 175

← 1 2 3 4 5 →