Interface electrical characteristics of passivation films on HgCdTe

被引：1
|
作者：
Zhang, XC [1 ]
Zheng, GZ [1 ]
Guo, SL [1 ]
Gui, YS [1 ]
Chu, JH [1 ]
机构：
[1] Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
来源：
THIRD INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 1998年 / 3175卷
关键词：
HgCdTe; passivation; interface electrical characteristics;
D O I：
10.1117/12.300664
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new passivation film: evaporated CdTe/ZnS combination film was grown on HgCdTe and the interface was characterized by Capacitance-Voltage(CV) characteristics of Metal-Insulator-Semiconductor(MIS) test structures. Under proper processing conditions, the interface electrical parameters are: density of fixed charge similar to-4.0 x 10(10) cm(-2), density of slow state similar to 5.1 x 10(10) cm(-2), density of fast interface state similar to 2.7 x 10(11) cm(-2)eV(-1), and the time stability is good. These results show CdTe/ZnS double layer film is suitable for passivation of HgCdTe infrared detectors. We have also investigated single layer ZnS and anodic oxide/CdTe/ZnS triple layer film and found that the time stability of ZnS isn't good, and there exists too high density of fixed positive charge at the triple layer film/HgCdTe interface.
引用
收藏
页码：183 / 185
页数：3
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