Simulation of suppression of floating-body effect in partially depleted SOI MOSFET using a Si1-xGex dual source structure

被引：10
|
作者：
Zhu, M
Chen, P
Fu, RKY
Liu, WL
Lin, CL
Chu, PK
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Res Ctr Funct Semicond Film Engn & Technol, Shanghai 200050, Peoples R China
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 114卷
关键词：
partially depleted SOI MOSFET; floating body effect; bandgap narrowing; impact ionization;
D O I：
10.1016/j.mseb.2004.07.070
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effect of the Si1-xGex source with an underlying p(+) region on the suppression of the floating body effects in a partially depleted silicon-on-insulator (SOI) metal oxide silicon field effect transistor (MOSFET) is numerically investigated. Compared to a conventional SOI MOSFET, the kink effect and anomalous sub-threshold slope are reduced and the breakdown voltage is substantially increased. The detailed suppression mechanism is also studied. Our results suggest that the narrow bandgap Si1-xGex source and buried p(+) region are favorable to the dispersion of holes generated by impact ionization. (C) 2004 Published by Elsevier B.V.
引用
收藏
页码：264 / 268
页数：5
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