On-Chip Investigation of Phase Noise in Monolithically Integrated Gain-Switched Lasers

被引：5
|
作者：
Alexander, Justin K. [1 ]
Morrissey, Padraic E. [1 ]
Caro, Ludovic [1 ]
Dernaika, Mohamad [1 ]
Kelly, Niall P. [1 ]
Peters, Frank H. [2 ]
机构：
[1] Tyndall Natl Inst, Photon Dept, Cork, Ireland
[2] Univ Coll Cork, Dept Phys, Cork, Ireland
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 2017年 / 29卷 / 09期
基金：
爱尔兰科学基金会;
关键词：
Integrated optoelectronics; optoelectronic devices; semiconductor lasers; laser noise; numerical simulation;
D O I：
10.1109/LPT.2017.2682560
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phase noise in gain-switched lasers is investigated theoretically using the semiconductor laser rate equations and compared with the experimental results from monolithically integrated devices. The phase noise of a gain-switched laser is modelled both with and without injection-locking using the rate equations for a single-mode laser. Phase noise is found to increase with gain-switching, and decrease when injection-locked to a master laser. This trend is then observed experimentally on-chip with monolithically integrated devices without the use of an isolator.
引用
收藏
页码：731 / 734
页数：4
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