On-Chip Investigation of Phase Noise in Monolithically Integrated Gain-Switched Lasers

被引：5

作者：

Alexander, Justin K. ^{[1
]}

Morrissey, Padraic E. ^{[1
]}

Caro, Ludovic ^{[1
]}

Dernaika, Mohamad ^{[1
]}

Kelly, Niall P. ^{[1
]}

Peters, Frank H. ^{[2
]}

机构：

[1] Tyndall Natl Inst, Photon Dept, Cork, Ireland

[2] Univ Coll Cork, Dept Phys, Cork, Ireland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2017年 / 29卷 / 09期

基金：

爱尔兰科学基金会;

关键词：

Integrated optoelectronics; optoelectronic devices; semiconductor lasers; laser noise; numerical simulation;

D O I：

10.1109/LPT.2017.2682560

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Phase noise in gain-switched lasers is investigated theoretically using the semiconductor laser rate equations and compared with the experimental results from monolithically integrated devices. The phase noise of a gain-switched laser is modelled both with and without injection-locking using the rate equations for a single-mode laser. Phase noise is found to increase with gain-switching, and decrease when injection-locked to a master laser. This trend is then observed experimentally on-chip with monolithically integrated devices without the use of an isolator.

引用

页码：731 / 734

页数：4

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