Ferromagnetism in ZnO single crystal

被引：49
|
作者：
Mishra, D. K. [1 ]
Kumar, P. [2 ]
Sharma, Manoj Kumar [3 ]
Das, J. [4 ]
Singh, S. K. [1 ]
Roul, B. K. [4 ]
Varma, S. [5 ]
Chatterjee, Ratnamala [3 ]
Srinivasu, V. V. [6 ]
Kanjilal, D. [2 ]
机构：
[1] CSIR, Inst Minerals & Mat Technol, Adv Mat Technol Dept, Bhubaneswar 751013, Orissa, India
[2] Inter Univ Accelerator Ctr, New Delhi 110067, India
[3] Indian Inst Technol, Dept Phys, New Delhi 110016, India
[4] Inst Mat Sci Agh, Bhubaneswar 751013, Orissa, India
[5] Inst Phys, Bhubaneswar 751004, Orissa, India
[6] CSIR, Natl Ctr Nano Struct Mat, Mechatron & MicroMfg MSM Div, ZA-0001 Pretoria, South Africa
来源：
PHYSICA B-CONDENSED MATTER | 2010年 / 405卷 / 12期
关键词：
Semiconductor; Raman measurements; Photoluminescence; Room temperature ferromagnetism; THIN-FILMS; PHOTOLUMINESCENCE;
D O I：
10.1016/j.physb.2010.03.047
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Room temperature ferromagnetism (RTFM) with a saturation magnetization (M-s) of 0.025 emu/cm(3) has been observed in single crystal of zinc oxide (ZnO). The presence of intrinsic defects like zinc (Zn) interstitials and oxygen (O) vacancies in single crystal ZnO is established through micro-Raman and photoluminescence studies. The role of intrinsic defects in introduction of RTFM in single crystal ZnO is discussed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2659 / 2663
页数：5
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