SPICE Macromodel of Spin-Torque-Transfer-Operated Magnetic Tunnel Junctions

被引：67
|
作者：
Harms, Jonathan D. [1 ]
Ebrahimi, Farbod [1 ]
Yao, Xiaofeng [1 ]
Wang, Jian-Ping [1 ]
机构：
[1] Univ Minnesota, Minneapolis, MN 55455 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2010年 / 57卷 / 06期
基金：
美国国家科学基金会;
关键词：
Macromodel; magnetic random-access memory (MRAM); magnetic tunnel junction (MTJ); SPICE; spin-torque-transfer (STT); LOGIC; MULTILAYER;
D O I：
10.1109/TED.2010.2047073
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The electrical behavior of a magnetic tunnel junction (MTJ) using spin-torque-transfer (STT) switching was modeled using a SPICE subcircuit. The subcircuit is a two-terminal device that exhibits the electrical characteristics of an STT-MTJ. These characteristics include all the major transient characteristics of an MTJ, including the hysteresis, bias voltage dependence of the resistance, and the critical switching current versus the critical switching time. The model was designed to work over a wide range of operating conditions. Simulation and analysis of an MTJ-based D flip-flop are presented to demonstrate possible applications of the model.
引用
收藏
页码：1425 / 1430
页数：6
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