Miniband formulation in Ge/Si quantum dot array

被引：6

作者：

Tsai, Yi-Chia ^{[1
]}

Lee, Ming-Yi ^{[1
]}

Li, Yiming ^{[1
]}

Samukawa, Seiji ^{[2
,3
]}

机构：

[1] Natl Chiao Tung Univ, Inst Commun Engn, Dept Elect & Comp Engn, Parallel & Sci Comp Lab, Hsinchu 300, Taiwan

[2] Tohoku Univ, Inst Fluid Sci, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Adv Inst Mat Res, World Premier Int Res Ctr Initiative, Sendai, Miyagi 9808577, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期

关键词：

PHOTOLUMINESCENCE; EFFICIENCY; SHAPE;

D O I：

10.7567/JJAP.55.04EJ14

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, we estimate the coupling effect of miniband structure and density of states (DoS) resulting from different qunatum-dot physical parameters in a well-aligned Ge/Si quantum dot (QD) array fabricated by neutral beam etching technology. The density of QDs dominates the coupling effect and miniband's bandwidth, the radius of QDs affects the magnitude of energy levels and miniband bandwidth, and the thickness of QDs has a great impact on the magnitude of energy levels. Among the different shapes of Ge/Si QDs, discoid QDs exhibit the most band crossing and broadest bandwith under the same physical parameters. (C) 2016 The Japan Society of Applied Physics

引用

页数：5

共 50 条

[31] Chaotic dynamics in quantum-dot miniband superlattices
Cao, JC
Liu, HC
Lei, XL
PHYSICAL REVIEW B, 2000, 61 (08) : 5546 - 5555
[32] InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates
Lee, Andrew D.
Jiang, Qi
Tang, Mingchu
Zhang, Yunyan
Seeds, Alwyn J.
Liu, Huiyun
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (04)
[33] Nanocrystal memory cell using high-density Si0.73Ge0.27 quantum dot array
Chae, DH
Kim, DH
Lee, Y
Kwak, CH
Lee, JD
Park, BG
Yoon, TS
Kwon, JY
Kim, KB
Kim, KR
Park, N
Yoon, H
Jeong, SJ
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 1999, 35 : S995 - S998
[34] Numerical Simulation of Highly Periodical Ge/Si Quantum Dot Array for Intermediate-Band Solar Cell Applications
Tsai, Yi-Chia
Lee, Ming-Yi
Li, Yiming
Samukawa, Seiji
2015 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD), 2015, : 68 - 71
[35] Dense Array of Quantum Dot in Ge/Si Nanostructures: Strain Induced Control of Electron Energy Spectrum and Optical Transitions
Dvurechenskii, Anatoliy
Yakimov, Andrew
2009 9TH IEEE CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), 2009, : 210 - 213
[36] Direct Measurement of Electron Intervalley Relaxation in a Si/Si-Ge Quantum Dot
Penthorn, Nicholas E.
Schoenfield, Joshua S.
Edge, Lisa F.
Jiang, HongWen
PHYSICAL REVIEW APPLIED, 2020, 14 (05):
[37] AFM and RHEED study of Ge/Si(001) quantum dot modification by Si capping
Bischoff, JL
Pirri, C
Dentel, D
Simon, L
Bolmont, D
Kubler, L
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 69 : 374 - 379
[38] Miniband structure and photon absorption in regimented quantum dot systems
Rodriguez-Bolivar, S.
Gomez-Campos, F. M.
Luque-Rodriguez, A.
Lopez-Villanueva, J. A.
Jimenez-Tejada, J. A.
Carceller, J. E.
JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
[39] Wannier-Stark effect in Ge/Si quantum dot superlattices
Sobolev, M. M.
Cirlin, G. E.
Tonkikh, A. A.
Zakharov, N. D.
SEMICONDUCTORS, 2008, 42 (03) : 305 - 309
[40] Surfactant-mediated Si quantum dot formation on Ge(001)
Pachinger, D.
Groiss, H.
Teuchtmann, M.
Hesser, G.
Schaeffler, F.
APPLIED PHYSICS LETTERS, 2011, 98 (22)

← 1 2 3 4 5 →