Design of type-II MgxZn1-xO:N/ZnO superlattices for UV photodetector applications

被引：2
|
作者：
Lin, Xiangan [1 ]
Li, Jinchai [1 ]
Kang, Junyong [1 ]
机构：
[1] Xiamen Univ, Dept Phys, Fujian Key Lab Semicond Mat & Applicat, Xiamen 361005, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2010年 / 25卷 / 04期
关键词：
ULTRAVIOLET; HETEROSTRUCTURES; PHOTODIODES; FILMS;
D O I：
10.1088/0268-1242/25/4/045012
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electronic structures of N-doped and undoped Mg0.25Zn0.75O/ZnO superlattices (SLs) were investigated by using a first-principles calculation. The partial charge density profiles show that electron and hole states are separated into ZnO and N-doped Mg0.25Zn0.75O layers. This property is further confirmed by the calculations of layer-projected density of states, which demonstrate that a type II band alignment is produced in an N-doped Mg0.25Zn0.75O/ZnO SL. The bandgap of the type II band alignment was evaluated to be adjusted through different MgO mole fractions. The results suggest the N-doped MgxZn1-x/ZnO SLs to apply to ultraviolet photodetectors with different cut-off wavelengths.
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收藏
页数：5
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