Fe-Based Semiconducting Heusler Alloys

被引：10
|
作者：
Khovaylo, V. V. [1 ]
Voronin, A. I. [1 ]
Zueva, V. Yu. [1 ]
Seredina, M. A. [1 ]
Chatterdjee, R. [2 ]
机构：
[1] Natl Univ Sci & Technol MISiS, Moscow 119049, Russia
[2] Indian Inst Technol Delhi, New Delhi 110016, India
来源：
SEMICONDUCTORS | 2017年 / 51卷 / 06期
基金：
俄罗斯科学基金会;
关键词：
THERMOELECTRIC PROPERTIES; HALF-HEUSLER; P-TYPE; PERFORMANCE; SYSTEM;
D O I：
10.1134/S1063782617060136
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
A brief overview of the current state of research on Fe-based semiconducting Heusler alloys is given. The most significant achievement in this area is the increase of thermoelectric figure of merit to ZT > 1 in the p-type Fe(V,Nb)Sb-based compounds. Besides these compounds, growing attention has been paid in recent years to the study of promising thermoelectric materials based on Fe(2)TiZ (Z = Al, Si, Sn) Heusler alloys and the investigation of multifunctional Fe(2)MnZ (Z = Al, Si) compounds, which may be of interest as thermoelectric materials as well as magnetic semiconductors with a high Curie temperature.
引用
收藏
页码：718 / 721
页数：4
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