A new method to determine channel mobility model parameters in submicron MOSFET's using measured S-parameters

被引：2

作者：

Lee, S ^{[1
]}

Yu, HK ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin 449791, Kyungki Do, South Korea

来源：

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年

关键词：

D O I：

10.1109/SISPAD.2000.871256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFET's. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods.

引用

页码：253 / 256

页数：4

共 50 条

[31] Extraction of Constitutive Effective Parameters for Reflective Metasurfaces Using Simplex S-Parameters
Han, Feng-Yuan
Wang, Yi-Dong
Yin, Li-Zheng
Wang, Di
Liu, Pu-Kun
2020 45TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2020,
[32] Characterization and modeling of electronic packages using S-parameters
Hernandez-Sosa, Gaudencio
Romo, Gerardo
Torres-Torres, Reydezel
2008 7TH INTERNATIONAL CARIBBEAN CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS, 2008, : 77 - +
[33] Reflective Metasurfaces: Retrieval of Constitutive Effective Parameters Using Simplex S-Parameters
Han, Feng-Yuan
Wang, Yi-Dong
Yin, Li-Zheng
Wang, Di
Liu, Pu-Kun
2020 IEEE MTT-S INTERNATIONAL CONFERENCE ON NUMERICAL ELECTROMAGNETIC AND MULTIPHYSICS MODELING AND OPTIMIZATION (NEMO 2020), 2020,
[34] LIMITING AMPLIFIER DESIGN USING TRANSISTOR S-PARAMETERS
KHRAMOV, AV
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII RADIOELEKTRONIKA, 1988, 31 (03): : 39 - 42
[35] Parameter Extraction of Ferrite Transformers Using S-Parameters
Damnjanovic, Mirjana
Zivanov, Ljiljana
Radosavljevic, Goran
Maric, Andrea
Menicanin, Aleksandar
PROCEEDINGS OF 14TH INTERNATIONAL POWER ELECTRONICS AND MOTION CONTROL CONFERENCE (EPE-PEMC 2010), 2010,
[36] METHOD OF OPTIMUM OSCILLATOR DESIGN USING POWER-DEPENDENT S-PARAMETERS
UMEDA, H
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (04): : 533 - 540
[37] Simulation of Nonuniform Coupled Transmission Lines using approximated S-Parameters Model
Wardzinska, Agnieszka
Bandurski, Wojciech
2018 IEEE 22ND WORKSHOP ON SIGNAL AND POWER INTEGRITY (SPI), 2018,
[38] Accurate Extraction and Modeling of High-Temperature-Dependent Channel Mobility in Metal-Oxide-Semiconductor Field-Effect Transistors Using Measured S-Parameters
Ko, Bonghyuk
Jung, Daehyoun
Lee, Seonghearn
JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
[39] A new variational method to determine effective channel length and series resistance of MOSFET's
Yamaguchi, K
Amishiro, H
Yamawaki, M
Asai, S
ICMTS 1998: PROCEEDINGS OF THE 1998 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, 1998, : 123 - 126
[40] Bi-anisotropic Metamaterials Effective Constitutive Parameters Extraction Using Oblique Incidence S-Parameters Method
Cohen, Doron
Shavit, Reuven
IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 2015, 63 (05) : 2071 - 2078

← 1 2 3 4 5 →