A new method to determine channel mobility model parameters in submicron MOSFET's using measured S-parameters

被引：2

作者：

Lee, S ^{[1
]}

Yu, HK ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin 449791, Kyungki Do, South Korea

来源：

2000 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2000年

关键词：

D O I：

10.1109/SISPAD.2000.871256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method based on the slope extraction of the total gate charge versus mask gate length from measured S-parameters is developed to determine effective channel mobility model parameters directly from submicron MOSFET's. Since this method does not require a large test device, parasitic capacitance calibration, or the effective channel length measurement, it is simpler and more accurate than traditional methods.

引用

页码：253 / 256

页数：4

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