Probing the relationship between structural and optical properties of Si-doped AlN

被引：16
|
作者：
Pantha, B. N. [1 ]
Sedhain, A. [1 ]
Li, J. [1 ]
Lin, J. Y. [1 ]
Jiang, H. X. [1 ]
机构：
[1] Texas Tech Univ, Dept Elect & Comp Engn, Lubbock, TX 79409 USA
来源：
APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 13期
关键词：
aluminium compounds; edge dislocations; elemental semiconductors; energy gap; III-V semiconductors; photoluminescence; screw dislocations; semiconductor doping; semiconductor epitaxial layers; silicon; wide band gap semiconductors; X-ray diffraction; MULTIPLE-QUANTUM WELLS; MU-M; WAVELENGTH;
D O I：
10.1063/1.3374444
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Much efforts have been devoted to achieve conductivity control in the ultrahigh band gap (similar to 6.1 eV) AlN by Si doping. The effects of Si-doping on the structural and optical properties of AlN epilayers have been investigated. X-ray diffraction studies revealed that accumulation of tensile stress in Si-doped AlN is a reason for the formation of additional edge dislocations. Photoluminescence (PL) studies revealed that the linewidths of both band-edge and impurity related transitions are directly correlated with the density of screw dislocations, N-screw, which increases with the Si doping concentration (N-Si). Furthermore, it was formulated that the band-edge (impurity) PL emission linewidth increases linearly with increasing N-screw at a rate of similar to 3.3 +/- 0.7 meV/10(8) cm(-2) (26.5 +/- 4 meV/10(8) cm(-2)), thereby establishing PL measurement as a simple and effective method to estimate screw dislocation density in AlN epilayers.
引用
收藏
页数：3
相关论文
共 50 条
  • [11] STRUCTURAL, OPTICAL AND ELECTRICAL STUDIES ON Si-DOPED POLYMER ELECTROLYTES
    Saxena, Amit
    Singh, Pramod Kumar
    Bhattacharya, Bhaskar
    MATERIALI IN TEHNOLOGIJE, 2013, 47 (06): : 799 - 802
  • [12] Luminescence properties of highly Si-doped AlN - art. no. 071906
    Monroy, E
    Zenneck, J
    Cherkashinin, G
    Ambacher, O
    Hermann, M
    Stutzmann, M
    Eickhoff, M
    APPLIED PHYSICS LETTERS, 2006, 88 (07)
  • [13] Properties of Si-doped GaN films grown using multiple AlN interlayers
    Koleske, DD
    Twigg, ME
    Wickenden, AE
    Henry, RL
    Gorman, RJ
    Freitas, JA
    Fatemi, M
    APPLIED PHYSICS LETTERS, 1999, 75 (20) : 3141 - 3143
  • [14] Properties of Si-doped GaN films grown using multiple AlN interlayers
    Code 6800, Electronics Sci. and Technol. Div., Naval Research Laboratory, Washington, DC 20375, United States
    Appl Phys Lett, 20 (3141-3143):
  • [15] Structure and magnetic characteristics of Si-doped AlN films
    Pan, D.
    Jian, J. K.
    Sun, Y. F.
    Wu, R.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2012, 519 : 41 - 46
  • [16] Heavily Si-doped AlN electron field emitters
    Kasu, M
    Kobayashi, N
    PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 993 - 996
  • [17] Compensating defects in Si-doped AlN bulk crystals
    Irmscher, K.
    Schulz, T.
    Albrecht, M.
    Hartmann, C.
    Wollweber, J.
    Fornari, R.
    PHYSICA B-CONDENSED MATTER, 2007, 401 : 323 - 326
  • [18] XPS study of impurities in Si-doped AlN film
    Liang, F.
    Chen, P.
    Zhao, D. G.
    Jiang, D. S.
    Zhao, Z. J.
    Liu, Z. S.
    Zhu, J. J.
    Yang, J.
    Le, L. C.
    Liu, W.
    He, X. G.
    Li, X. J.
    Li, X.
    Liu, S. T.
    Yang, H.
    Liu, J. P.
    Zhang, L. Q.
    Zhang, Y. T.
    Du, G. T.
    SURFACE AND INTERFACE ANALYSIS, 2016, 48 (12) : 1305 - 1309
  • [19] Structure and magnetic characteristics of Si-doped AlN films
    Wu, R. (rongwu1022@163.com), 1600, Elsevier Ltd (519):
  • [20] A comparative study of the structural and optical properties of Si-doped GaAs under different ion irradiation
    He, Jingxuan
    Shen, Ye
    Li, Bo
    Xiang, Xia
    Li, Sean
    Fang, Xuan
    Xiao, Haiyan
    Zu, Xiaotao
    Qiao, Liang
    OPTICAL MATERIALS, 2021, 111
12345