Breaking the phonon bottleneck for holes in semiconductor quantum dots

被引:191
|
作者
Cooney, Ryan R. [1 ]
Sewall, Samuel L. [1 ]
Anderson, Kevin E. H. [1 ]
Dias, Eva A. [1 ]
Kambhampati, Patanjali [1 ]
机构
[1] McGill Univ, Dept Chem, Montreal, PQ H3A 2K6, Canada
关键词
D O I
10.1103/PhysRevLett.98.177403
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Size dependent hole dynamics are measured in colloidal CdSe quantum dots for a specific state-to-state excitonic transition. These experiments show that the hole energy loss rate increases for smaller quantum dots, contradicting known relaxation mechanisms for holes. These experiments reveal a new mechanism for hole relaxation in colloidal quantum dots which circumvents the expected phonon bottleneck for holes. The data are consistent with a nonadiabatic surface channel as the dominant pathway for hole relaxation in colloidal semiconductor quantum dots.
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页数:4
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