Breaking the phonon bottleneck for holes in semiconductor quantum dots

被引：191

作者：

Cooney, Ryan R. ^{[1
]}

Sewall, Samuel L. ^{[1
]}

Anderson, Kevin E. H. ^{[1
]}

Dias, Eva A. ^{[1
]}

Kambhampati, Patanjali ^{[1
]}

机构：

[1] McGill Univ, Dept Chem, Montreal, PQ H3A 2K6, Canada

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.98.177403

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Size dependent hole dynamics are measured in colloidal CdSe quantum dots for a specific state-to-state excitonic transition. These experiments show that the hole energy loss rate increases for smaller quantum dots, contradicting known relaxation mechanisms for holes. These experiments reveal a new mechanism for hole relaxation in colloidal quantum dots which circumvents the expected phonon bottleneck for holes. The data are consistent with a nonadiabatic surface channel as the dominant pathway for hole relaxation in colloidal semiconductor quantum dots.

引用

页数：4

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