Crystalline and amorphous structures of Ge-Sb-Te nanoparticles

被引:20
|
作者
Park, Gyeong-Su
Kwon, Ji-Hwan
Kim, Miyoung
Yoon, H. R.
Jo, W.
Kim, T. K.
Zuo, Jian-Min
Khang, Yoonho
机构
[1] Samsung Adv Inst Technol, Analyt Engn Ctr, Suwon 440600, South Korea
[2] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
[3] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea
[4] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
[5] Samsung Adv Inst Technol, Semicond Device & Mat Lab, Suwon 440600, South Korea
关键词
D O I
10.1063/1.2752550
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report effects of thermal annealing on the structures of Ge-Sb-Te (GST) nanoparticles synthesized by pulsed laser ablation deposition. The average diameter of the GST nanoparticles is an order of 10 nm. The as-prepared sample contains nanocrystals surrounded by an amorphous phase. Further crystallization occurs during annealing. The structures of the nanocrystals and amorphous phase were studied by electron diffraction and radial distribution function analyses. The results show that the nanoparticles annealed at 100 degrees C are crystalline, consisting of a mixture of face centered cubic (fcc) and hexagonal Ge2Sb2Te5 (dominant). In comparison, the nanoparticles annealed at 200 degrees C are mostly fcc. The surrounding amorphous phase has similar atomic arrangements to the previously reported amorphous GST thin films. (c) 2007 American Institute of Physics.
引用
收藏
页数:5
相关论文
共 50 条
  • [41] Ge Enrichment of Ge-Sb-Te Alloys as Keystone of Flexible Edge Electronics
    Calvi, Sabrina
    Bertelli, Marco
    De Simone, Sara
    Maita, Francesco
    Prili, Simone
    Fattorini, Adriano Diaz
    De Matteis, Fabio
    Mussi, Valentina
    Riva, Flavia Righi
    Longo, Massimo
    Arciprete, Fabrizio
    Calarco, Raffaella
    ADVANCED ELECTRONIC MATERIALS, 2025, 11 (02):
  • [42] Epitaxial formation of cubic and trigonal Ge-Sb-Te thin films with heterogeneous vacancy structures
    Hilmi, Isom
    Lotnyk, Andriy
    Gerlach, Juergen W.
    Schumacher, Philipp
    Rauschenbach, Bernd
    MATERIALS & DESIGN, 2017, 115 : 138 - 146
  • [43] Electron microscopy study on amorphous Ge-Sb-Te thin film for phase change optical recording
    Naito, M
    Ishimaru, M
    Hirotsu, Y
    Takashima, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (10A): : L1158 - L1160
  • [44] Origin of nonlinear optical characteristics of crystalline Ge-Sb-Te thin films for possible superresolution effects
    Lee, Hyun Seok
    Cheong, Byung-ki
    Lee, Taek Sung
    Jeong, Jeung-Hyun
    Lee, Suyoun
    Kim, Won Mok
    Kim, Donghwan
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (12-16): : L277 - L279
  • [45] Antimony bonding in Ge-Sb-Te phase change materials
    Bobela, David C.
    Taylor, P. Craig
    Kuhns, Phillip
    Reyes, Arneil
    Edwards, Arthur
    PHYSICAL REVIEW B, 2011, 83 (03):
  • [46] Photonic Ge-Sb-Te phase change metamaterials and their applications
    Cao, Tun
    Wang, Rongzi
    Simpson, Robert E.
    Li, Guixin
    PROGRESS IN QUANTUM ELECTRONICS, 2020, 74
  • [47] Amorphous structures of Ge/Sb/Te alloys: Density functional simulations
    Akola, J.
    Jones, R. O.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2012, 249 (10): : 1851 - 1860
  • [48] Direct observation of amorphous to crystalline phase transitions in Ge-Sb-Te thin films by grazing incidence X-ray diffraction method
    Kozyukhin, Sergey A.
    Nikolaev, Ilja I.
    Lazarenko, Petr, I
    Valkovskiy, Gleb A.
    Konovalov, Oleg
    Kolobov, Alexander, V
    Grigoryeva, Natalia A.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020, 31 (13) : 10196 - 10206
  • [49] Mathematically modeling of Ge-Sb-Te superlattice to estimate the characteristics
    Chen, Ruxian
    Naeem, Muhammad
    Ishaq, Muhammad
    Tawfiq, Ferdous M.
    Rauf, Abdul
    Aslam, Adnan
    AIN SHAMS ENGINEERING JOURNAL, 2024, 15 (04)
  • [50] STRUCTURAL STUDY OF SILVER PHOTODOPED Ge-Sb-Te FILMS
    Kumar, Sandeep
    Singh, Digvijay
    Thangaraj, R.
    CHALCOGENIDE LETTERS, 2011, 8 (05): : 355 - 361