Role of defects during amorphization and relaxation processes in Si (Reprinted from Nuclear Instruments and Methods in Physics Research B, vol 106, pg 198-205, 1995)

被引：0
|
作者：
Motooka, T [1 ]
Hiroyama, Y [1 ]
Suzuki, R [1 ]
Ohdaira, T [1 ]
Hirano, Y [1 ]
Sato, F [1 ]
机构：
[1] KYUSHU UNIV,DEPT MAT SCI & ENGN,FUKUOKA 812,JAPAN
来源：
ION BEAM MODIFICATION OF MATERIALS | 1996年
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TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
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页码：198 / 205
页数：8
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