Gas cluster ion beam processing

被引:0
|
作者
Yamada, I [1 ]
Matsuo, J [1 ]
Toyoda, N [1 ]
Aoki, T [1 ]
Jones, E [1 ]
Insepov, Z [1 ]
机构
[1] Kyoto Univ, Ion Beam Engn Expt Lab, Sakyo Ku, Kyoto 60601, Japan
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Unique characteristics of gas cluster ion beam processing are reviewed. Cluster ion beams consisting of a few hundreds to thousands of atoms have been generated from various kinds of gas materials. Multi-collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally low energy bombarding effects in a range of a few eV to hundreds of eV per atom at very high density. These bombarding characteristics can be applied to shallow ion implantation high yield sputtering and smoothing, surface cleaning and low temperature thin film formation.
引用
收藏
页码:310 / 329
页数:20
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