Gas cluster ion beam processing

被引:0
|
作者
Yamada, I [1 ]
Matsuo, J [1 ]
Toyoda, N [1 ]
Aoki, T [1 ]
Jones, E [1 ]
Insepov, Z [1 ]
机构
[1] Kyoto Univ, Ion Beam Engn Expt Lab, Sakyo Ku, Kyoto 60601, Japan
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Unique characteristics of gas cluster ion beam processing are reviewed. Cluster ion beams consisting of a few hundreds to thousands of atoms have been generated from various kinds of gas materials. Multi-collisions during the impact of accelerated cluster ions upon the substrate surfaces produce fundamentally low energy bombarding effects in a range of a few eV to hundreds of eV per atom at very high density. These bombarding characteristics can be applied to shallow ion implantation high yield sputtering and smoothing, surface cleaning and low temperature thin film formation.
引用
收藏
页码:310 / 329
页数:20
相关论文
共 50 条
  • [1] Gas cluster ion beam processing equipment
    Bachand, J
    Freytsis, A
    Harrington, E
    Gwinn, M
    Hofmeester, N
    Hautala, J
    Mack, ME
    Regan, K
    IIT2002: ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2003, : 669 - 672
  • [2] Gas cluster ion beam processing for ULSI fabrication
    Yamada, I
    Matsuo, J
    ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 265 - 276
  • [3] Gas cluster ion beam infusion processing of semiconductors
    MacCrimmon, R
    Hautala, J
    Gwinn, M
    Sherman, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 242 (1-2): : 427 - 430
  • [4] Gas cluster ion beam processing for si photonics
    Toyoda, N.
    Yamada, I.
    Akiyama, S.
    Kimerling, L. C.
    Ishikawa, Y.
    Wada, K.
    2007 4TH IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2007, : 58 - +
  • [5] Nanoscale processing by gas cluster ion beams - Novel technique in ion beam processing
    Yamada, I
    Matsuo, J
    THIRD INTERNATIONAL CONFERENCE ON INTELLIGENT MATERIALS - THIRD EUROPEAN CONFERENCE ON SMART STRUCTURES AND MATERIALS, 1996, 2779 : 759 - 764
  • [6] Gas cluster ion beam processing of GaSb and InSb surfaces
    Krishnaswami, K
    Vangala, SR
    Krejca, B
    Allen, LP
    Santeufemio, C
    Dauplaise, H
    Liu, X
    Whitten, J
    Ospina, M
    Sung, C
    Bliss, D
    Goodhue, WD
    RADIATION EFFECTS AND ION-BEAM PROCESSING OF MATERIALS, 2004, 792 : 617 - 622
  • [7] Gas cluster ion beam equipment and applications for surface processing
    Toyoda, Noriaki
    Yamada, Isao
    IEEE TRANSACTIONS ON PLASMA SCIENCE, 2008, 36 (04) : 1471 - 1488
  • [8] Substrate smoothing using gas cluster ion beam processing
    L. P. Allen
    D. B. Fenner
    V. Difilippo
    C. Santeufemio
    E. Degenkolb
    W. Brooks
    M. Mack
    J. Hautala
    Journal of Electronic Materials, 2001, 30 : 829 - 833
  • [9] Substrate smoothing using gas cluster ion beam processing
    Allen, LP
    Fenner, DB
    Difilippo, V
    Santeufemio, C
    Degenkolb, E
    Brooks, W
    Mack, M
    Hautala, J
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (07) : 829 - 833
  • [10] Cluster ion beam processing
    Yamada, I
    PHYSICS AND CHEMISTRY OF CLUSTERS, 2001, 117 : 253 - 266