Reentrant pinning of a 3He overlayer in a 3He-4He mixture film

被引:1
|
作者
Okamura, Ko [1 ]
Taniguchi, Junko [1 ]
Hieda, Mitsunori [2 ]
Suzuki, Masaru [1 ]
机构
[1] Univ Electrocommun, Dept Engn Sci, Chofu, Tokyo 1828585, Japan
[2] Tokyo Med & Dent Univ, Coll Liberal Arts & Sci, Ichikawa, Chiba 2720827, Japan
关键词
Mixtures;
D O I
10.1103/PhysRevB.100.214508
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We performed quartz crystal microbalance experiments for a He-3-He-4 mixture film on an exfoliated single-crystalline graphite using a 32-kHz quartz tuning fork. The decoupled He-3 overlayer on the superfluid He-4 layer shows a reentrant pinning at a certain temperature T-3d under a large oscillation amplitude. The pinning state below T-3d is metastable. After reducing the oscillation amplitude, the He-3 overlayer relaxes to a stable pinning state via a depinning state. It is found that the reentrant pinning is triggered by a structure change of the underlying localized He-4 layer on the oscillating substrate.
引用
收藏
页数:5
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