A Short Channel MOSFET Modelling for Analogue Circuit Design with Emphasis on Carrier Mobility

被引：0
|
作者：
Sevcenco, Andrei [1 ]
Brezeanu, Gheorghe [2 ]
Badila, Marian [1 ]
机构：
[1] ON Semicond, Phoenix, AZ 85001 USA
[2] Univ Politeh Bucharest, Bucharest, Romania
来源：
ISSCS 2009: INTERNATIONAL SYMPOSIUM ON SIGNALS, CIRCUITS AND SYSTEMS, VOLS 1 AND 2, PROCEEDINGS, | 2009年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An analytical model to estimate the submicron MOS channel electrical characteristics is presented. The carrier mobility dependence on horizontal and vertical electrical fields in the transistor's channel is considered. New expressions are obtained for the transfer and output characteristics. A very good agreement between the model and the measured data on nMOS and pMOS structures for analogue applications is proved.
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页码：353 / +
页数：2
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