Metallicity in LaTiO3 thin films induced by lattice deformation

被引：61

作者：

Wong, Franklin J. ^{[1
,2
]}

Baek, Seung-Hyub ^{[3
]}

Chopdekar, Rajesh V. ^{[1
]}

Mehta, Virat V. ^{[1
,2
]}

Jang, Ho-Won ^{[3
]}

Eom, Chang-Beom ^{[3
]}

Suzuki, Yuri ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[3] Univ Wisconsin, Dept Mat Sci & Engn, Madison, WI 53706 USA

来源：

PHYSICAL REVIEW B | 2010年 / 81卷 / 16期

基金：

美国国家科学基金会;

关键词：

INSULATOR TRANSITIONS; MAGNETIC-PROPERTIES; TRANSPORT;

D O I：

10.1103/PhysRevB.81.161101

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Orthorhombic bulk LaTiO3 is a correlated Mott insulator whose delicate antiferromagnetic insulating ground state can be easily destroyed by cation vacancies, excess oxygen, or alkaline-earth dopants, resulting in metallicity. Here we show that metallic conduction can also be realized in epitaxial LaTiO3 thin films on (001) SrTiO3 substrates, while films grown on (110) DyScO3 and GdScO3 substrates are insulating. These results illustrate the sensitivity of electrical transport to lattice effects and demonstrate the tunability of correlated oxide thin-film properties via substrate-induced deformation.

引用

页数：4

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