Characterization of amorphous high-k thin films by EXAFS and GIXS

被引：0

作者：

Takemura, Momoko ^{[1
]}

Yamazaki, Hideyuki ^{[1
]}

Ohmori, Hirobumi ^{[1
]}

Yoshiki, Masahiko ^{[1
]}

Takeno, Shiro ^{[1
]}

Ino, Tsunehiro ^{[1
]}

Nishiyama, Akira ^{[1
]}

Sato, Nobutaka ^{[2
]}

Hirosawa, Ichiro ^{[3
]}

Sato, Masugu ^{[3
]}

机构：

[1] Toshiba Co Ltd, Corp R&D, Saiwai Ku, 1 Komukai Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

[2] Toshiba Nanoanal Crop, Kawasaki, Kanagawa 2128582, Japan

[3] JASRI, Sayogun, Hyogo 6795198, Japan

来源：

SYNCHROTRON RADIATION INSTRUMENTATION, PTS 1 AND 2 | 2007年 / 879卷

关键词：

EXAFS; GIXS; gate insulator; high-k; hafnium oxide; oxynitride; amorphous; SPring-8;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Silicon and nitrogen incorporated Hf oxide (HfSiON) is considered to be a promising alternative gate insulator for next-generation MOSFETs. EXAFS and GIXS (Grazing Incidence X-ray Scattering) have been applied to the characterization of amorphous HfSiON films at SPring-8. Novel cluster models have been suggested based on the analogy to the ordered states for the Zr-O-N ternary system.

引用

页码：1573 / +

页数：2

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