Three-dimensional phototransistors in 3D silicon-on-insulator technology

被引：4
|
作者：
Culurciello, E. [1 ]
机构：
[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 07期
关键词：
D O I：
10.1049/el:20073502
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Measurement results of phototransistors designed in a three-dimensional (3D) 0.18 pm silicon-on-insulator technology are presented. The phototransistors respond to light intensities of 5-200 000 lux with currents from 50 fA to 2.3 mu A. The novelty of this phototransistor is that its photocurrent is proportional to the square of the incident light intensity. The device measurements reported show that the photodetectors can be used for the design of high-density imaging arrays in three-dimensional SOI CMOS fabrication processes.
引用
收藏
页码：418 / 420
页数：3
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