Temperature-frequency dependence and mechanism of dielectric properties for γ-Y2Si2O7

被引：0

作者：

Hou Zhi-Ling ^{[1
,2
]}

Cao Mao-Sheng ^{[1
]}

Yuan Jie ^{[3
]}

Song Wei-Li ^{[1
]}

机构：

[1] Beijing Inst Technol, Sch Mat Sci & Engn, Beijing 100081, Peoples R China

[2] Beijing Univ Chem Technol, Sch Sci, Beijing 100029, Peoples R China

[3] Cent Univ Nationalities, Sch Informat Engn, Beijing 100081, Peoples R China

来源：

CHINESE PHYSICS B | 2010年 / 19卷 / 01期

基金：

中国国家自然科学基金;

关键词：

gamma-Y2Si2O7; dielectric properties; structural relaxation polarization; low dielectric loss; PRESSED SILICON-NITRIDE; YTTRIUM DISILICATE; OPTICAL-PROPERTIES; H-BN; CERAMICS; BEHAVIOR; NANOCOMPOSITES; STRENGTH;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This paper reports that single-phase gamma-Y2Si2O7 is prepared via a sufficient blending and cold-pressed sintering technique from Y2O3 powder and SiO2 nanopowder. It studies the dielectric properties of gamma-Y2Si2O7 as a function of the temperature and frequency. The gamma-Y2Si2O7 exhibits low dielectric loss and non-Debye relaxation behaviour from 25 to 1400 degrees C in the range of 7.3-18 GHz. The mechanism for polarization relaxation of the as-prepared gamma-Y2Si2O7 differing from that of SiO2 is explained. Such particular dielectric properties could potentially make specific attraction for extensive practical applications.

引用

页数：5

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