Non-poisoning dual Damascene patterning scheme for low-k and ultra low-k BEOL

被引：0

作者：

Cote, W. ^{[1
]}

Edelstein, D. ^{[1
]}

Bunke, C. ^{[1
]}

Biolsi, P. ^{[1
]}

Wille, W. ^{[1
]}

Baks, H. ^{[1
]}

Conti, R. ^{[1
]}

Dalton, T. ^{[1
]}

Houghton, T. ^{[1
]}

Li, W-K. ^{[1
]}

Lin, Y-H. ^{[1
]}

Moskowitz, S. ^{[1
]}

Restaino, D. ^{[1
]}

Van Kleeck, T. ^{[1
]}

Vogt, S. ^{[1
]}

Ivers, T. ^{[1
]}

机构：

[1] IBM Corp, Semicond Res & Devel Ctr, Hopewell Jct, NY 12533 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2006 (AMC 2006) | 2007年

关键词：

D O I：

暂无

中图分类号：

TF [冶金工业];

学科分类号：

0806 ;

摘要：

引用

页码：289 / 294

页数：6

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