Non-poisoning dual Damascene patterning scheme for low-k and ultra low-k BEOL

被引：0
|
作者：
Cote, W. [1 ]
Edelstein, D. [1 ]
Bunke, C. [1 ]
Biolsi, P. [1 ]
Wille, W. [1 ]
Baks, H. [1 ]
Conti, R. [1 ]
Dalton, T. [1 ]
Houghton, T. [1 ]
Li, W-K. [1 ]
Lin, Y-H. [1 ]
Moskowitz, S. [1 ]
Restaino, D. [1 ]
Van Kleeck, T. [1 ]
Vogt, S. [1 ]
Ivers, T. [1 ]
机构：
[1] IBM Corp, Semicond Res & Devel Ctr, Hopewell Jct, NY 12533 USA
来源：
ADVANCED METALLIZATION CONFERENCE 2006 (AMC 2006) | 2007年
关键词：
D O I：
暂无
中图分类号：
TF [冶金工业];
学科分类号：
0806 ;
摘要：
引用
收藏
页码：289 / 294
页数：6
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