A 12-GHz low phase noise VCO by employing CMOS field-plate transistors

被引：1

作者：

Wei, Chien-Cheng ^{[1
]}

Chiu, Hsien-Chin ^{[1
]}

Feng, Wu-Shiung ^{[1
]}

机构：

[1] Chang Gung Univ, Dept Elect Engn, Taoyuan, Taiwan

来源：

2007 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2007年

关键词：

voltage-controlled oscillator (VCO); CMOS; field-plate technology; 1/f noise; phase noise;

D O I：

10.1109/RFIC.2007.380956

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a voltage-controlled oscillator (VCO) with low phase noise by employing the CMOS field-plate (FP) transistors. The proposed FP transistors perform the improvement in flicker noise (1/f noise) was demonstrated in our previous investigation. A complete large-signal model for FP transistors was established by modified BSIM4 model with lossy substrate networks. The proposed 12-GHz VCO with FP transistors was designed and fabricated in TSMC 0.13-mu m CMOS process. The measured characteristic of phase noise is 122 dBc/Hz at 1-MHz offset frequency. Compare with a conventional VCO, this novel design shows that the proposed VCO achieves lower phase noise about 5 dBc at offset frequency from 100-kHz to 1-MHz.

引用

页码：603 / +

页数：2

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